| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs(th) (Max) @ Id |
The Vishay Dale SI4804CDY-T1-E3 is a Dual N-Channel MOSFET from the TrenchFET® Power MOSFET family. It is designed for applications such as DC/DC converters and notebook system power.
Key electrical specifications include a drain-source breakdown voltage of 30V and a maximum continuous drain current of 8A at 25°C. The on-resistance (Rds On) is as low as 22mOhm at a gate-source voltage of 10V, with a gate charge of 23nC at 10V. The input capacitance is rated at 865pF at 15V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-SOIC package and is designed for surface mounting. The maximum power dissipation is 3.1W at 25°C.
The device is compliant with RoHS 3 standards and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The on-resistance is 22mOhm at a gate-source voltage of 10V and a drain current of 7.5A.
The operating junction and storage temperature range is -55°C to 150°C.
It is available in an 8-SOIC package designed for surface mounting.
Yes, it is RoHS 3 compliant.