BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 0528+ | On Request | On Request |
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The Vishay Dale SI4800DY is a high-performance N-Channel MOSFET housed in a SOIC-8 package. It is engineered for applications requiring fast switching speeds and efficient power handling.
Key electrical specifications include a maximum drain-source voltage of 30V and a continuous drain current of 99A at 25°C ambient temperature. The MOSFET exhibits low on-state resistance, with a typical value of 0.0155 Ω at VGS = 10V and ID = 30A. Dynamic characteristics such as total gate charge (Qg) are also specified, with a maximum of 13 nC, contributing to its fast switching capabilities.
This device operates within a temperature range of -55°C to 150°C, with a maximum junction-to-ambient thermal resistance of 50°C/W. The SOIC-8 package is suitable for surface-mount applications.
Replacement part information indicates that the Si4800BDY is a successor to the Si4800DY, with lead-free versions also available.
The maximum drain-source voltage is 30V.
The continuous drain current is 99A at 25°C.
The typical on-resistance is 0.0155 Ω at VGS = 10V and ID = 30A.
The SI4800DY is available in a SOIC-8 package.
The operating junction and storage temperature range is -55°C to 150°C.