| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56,274 pcs
|
56274 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4800BDY-T1-GE3 is a high-efficiency, fast-switching N-Channel MOSFET designed for PWM applications. It features TrenchFET® technology for reduced gate charge and improved performance.
Key electrical specifications include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 9A at 25°C. The on-resistance (Rds(on)) is as low as 18.5mΩ at a gate-source voltage (Vgs) of 10V, and 30mΩ at 4.5V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 1.8V at 250µA.
This MOSFET operates over a wide temperature range of -55°C to 150°C. It is housed in an 8-SOIC package suitable for surface mounting. The device is designed for high-efficiency PWM optimization and is 100% UIS and Rg tested.
Halogen-free options are available according to IEC 61249-2-21. The part is suitable for various power management applications where efficient switching and low on-resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C.
Maximum 1.8 V at VDS = VGS, ID = 250 µA.
18.5 mΩ maximum at VGS = 10 V, ID = 9 A.
13 nC maximum at VDS = 15 V, VGS = 5.0 V, ID = 9 A.
11.25 mJ.