SI4800BDY-T1-E3 The Vishay Dale SI4800BDY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 6.5A. It features low Rds On resistance and TrenchFET technology.
Mfr Part #:

SI4800BDY-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4800BDY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 6.5A. It features low Rds On resistance and TrenchFET technology.
✓ Total Stock: 413,373 pcs
$ Price Range: $0.99

SI4800BDY-T1-E3 Available from 5 distributors

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✓ Non-Authorised

SI4800BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SI4800BDY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4800BDY-T1-E3 is an N-Channel Power MOSFET designed for high efficiency in PWM applications. It offers a drain-source voltage of 30V and a continuous drain current of up to 6.5A at 25°C ambient temperature.

 

Key electrical characteristics include a low Rds On of 18.5mOhm at 9A and 10V Vgs, and a gate threshold voltage of 1.8V maximum. The device also features a gate charge of 13 nC maximum at 5V Vgs and a fast switching capability with low turn-on and turn-off delay times.

 

Packaged in an 8-SOIC surface mount package, the SI4800BDY-T1-E3 operates within a temperature range of -55°C to 150°C. It is designed with TrenchFET technology for improved performance and is 100% UIS and Rg tested. The component is also halogen-free according to IEC 61249-2-21 standards.

SI4800BDY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Si4800BDY N-Channel MOSFET
Subcategory: N-Channel

SI4800BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4800BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4800BDY-T1-E3 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Low Rds On: 18.5mOhm at 9A, 10V.
  • Fast switching times and low gate charge.
  • 8-SOIC surface mount package.
  • Halogen-free according to IEC 61249-2-21.

SI4800BDY-T1-E3 Applications

  • Ideal for high-efficiency PWM applications.
  • Suitable for power management circuits.
  • Used in switching power supplies.
  • Applicable in DC-DC converters.

SI4800BDY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4800BDY-T1-E3?

The maximum drain-source voltage is 30 V.

What is the Rds On resistance of the SI4800BDY-T1-E3?

The Rds On is a maximum of 18.5 mOhm at 9A drain current and 10V gate-source voltage.

What is the continuous drain current rating?

The continuous drain current is 6.5 A at 25°C ambient temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4800BDY-T1-E3 supplied in?

It is supplied in an 8-SOIC package.

Is the SI4800BDY-T1-E3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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