| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,571 pcs
|
9571 pcs | On Request | 1 | On Request | On Request | 1706+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4778DY-T1-GE3 is an N-Channel Power MOSFET designed for various applications including DC/DC converters, gaming, and notebook system power. It offers a drain-source voltage (Vds) of 25V and a continuous drain current (Id) of 8A at 25°C case temperature.
Key electrical characteristics include a low drain-source on-state resistance (Rds(on)) of 0.023 Ohms at 7A and 10V Vgs, and 0.028 Ohms at 6.3A and 4.5V Vgs. The gate-source threshold voltage (Vgs(th)) is a maximum of 2.2V at 250µA, with a maximum gate-source voltage of ±16V.
This MOSFET is housed in an 8-SOIC package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The device is also halogen-free, meeting IEC 61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 25V.
The maximum continuous drain current is 8A.
The Rds On is a maximum of 0.023 Ohms.
The operating temperature range is -55°C to 150°C.
It is available in an 8-SOIC package.
Yes, it is RoHS3 Compliant.
Yes, it is halogen-free.