SI4778DY-T1-E3 The Vishay Dale SI4778DY-T1-E3 is an N-Channel MOSFET with a 25V drain-source voltage and 8A continuous current rating. It comes in an 8-SOIC package.
Mfr Part #:

SI4778DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4778DY-T1-E3 is an N-Channel MOSFET with a 25V drain-source voltage and 8A continuous current rating. It comes in an 8-SOIC package.
✓ Total Stock: 3,340 pcs
$ Price Range: $0.99

SI4778DY-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,340 pcs
3340 pcs On Request 1 On Request On Request 11+ On Request On Request

SI4778DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4778DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4778DY-T1-E3 is an N-Channel MOSFET designed for power management applications. It features a 25V drain-source breakdown voltage and a continuous drain current of 8A at 25°C case temperature.

 

Key electrical characteristics include a low on-state resistance of 23mΩ at 7A and 10V VGS, and a gate charge of 18nC at 10V VGS. The MOSFET operates within a temperature range of -55°C to 150°C.

 

This component is housed in an 8-SOIC package, suitable for surface mounting. Its technology is MOSFET (Metal Oxide), and it is designed for applications such as DC/DC converters, gaming, and notebook system power.

 

The device is RoHS3 compliant and halogen-free, meeting environmental standards for electronic components.

SI4778DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4778DY-T1-E3 N-Channel 25V 8A MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SI4778DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4778DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4778DY-T1-E3 Features

  • 25V drain-source breakdown voltage.
  • 8A continuous drain current.
  • Low Rds On resistance.
  • Surface mount 8-SOIC package.
  • Halogen-free and RoHS3 compliant.

SI4778DY-T1-E3 Applications

  • Suitable for DC/DC converters.
  • Used in gaming systems.
  • Ideal for notebook power.
  • General power switching applications.

SI4778DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4778DY-T1-E3?

The maximum drain-source voltage is 25V.

What is the continuous drain current rating?

The continuous drain current is 8A at 25°C case temperature.

What is the Rds On resistance at 7A and 10V VGS?

The Rds On resistance is a maximum of 0.023 Ohms at 7A and 10V VGS.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI4778DY-T1-E3 in?

It is in an 8-SOIC package.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant.

Is the SI4778DY-T1-E3 halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21.

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