| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| SVHC Present |
The Vishay Siliconix Si4778DY is an N-Channel Power MOSFET featuring TrenchFET technology. It is rated for a maximum drain-source voltage (VDS) of 25V and offers a low on-state resistance (RDS(on)) of 0.023 Ohms at VGS = 4.5V and ID = 6.3A. The continuous drain current (ID) is rated up to 8A.
This MOSFET is suitable for applications such as DC/DC converters, gaming, and notebook system power. It is available in a compact SO-8 package, designed for surface mounting.
Key electrical characteristics include a gate-source threshold voltage (VGS(th)) typically around 2.2V and a gate-source voltage (VGS) range of ±16V. The device also features dynamic characteristics like input capacitance (Ciss) of 680pF and output capacitance (Coss) of 120pF.
The Si4778DY is tested 100% for Rg and UIS, and is available in lead (Pb)-free and halogen-free options.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the Si4778DY is 25V.
The typical on-state resistance (RDS(on)) of the Si4778DY at VGS = 4.5V and ID = 6.3A is 0.023 Ohms.
The continuous drain current (ID) for the Si4778DY is rated up to 8A at TC = 25°C and TC = 70°C.
The Si4778DY MOSFET is supplied in an SO-8 package.
Typical applications for the Si4778DY include DC/DC converters, gaming, and notebook system power.