SI4688DY-T1-E3 The Vishay Siliconix SI4688DY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It offers 8.9A continuous drain current and a low on-resistance of 11mOhm at 10V gate-source voltage.
Mfr Part #:

SI4688DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI4688DY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It offers 8.9A continuous drain current and a low on-resistance of 11mOhm at 10V gate-source voltage.
✓ Total Stock: 401,778 pcs
$ Price Range: $0.99

SI4688DY-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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401,778 pcs
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SI4688DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4688DY-T1-E3 Description

Short technical summary and product information.

The SI4688DY-T1-E3 is an N-Channel Power MOSFET from Vishay Siliconix, part of their TrenchFET series. This device is designed for applications requiring efficient power switching, such as notebook PC core and system power.

 

Key electrical specifications include a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 8.9A at 25°C ambient temperature. The MOSFET exhibits a low on-resistance (Rds(on)) of 11mOhm at a gate-source voltage (Vgs) of 10V and a drain current of 12A. It operates within a wide temperature range of -55°C to 150°C.

 

The device is housed in an 8-SOIC surface mount package, measuring 0.154" (3.90mm) in width. Its TrenchFET technology contributes to high performance and efficiency. The maximum power dissipation is rated at 1.4W at 25°C.

 

This MOSFET is suitable for various power management tasks in electronic designs. Its specifications make it a viable option for applications demanding reliable and efficient switching performance.

SI4688DY-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Siliconix Si4688DY N-Channel 30V TrenchFET Power MOSFET
Subcategory: N-Channel

SI4688DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4688DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4688DY-T1-E3 Features

  • N-Channel 30V TrenchFET Power MOSFET
  • Continuous drain current of 8.9A at 25°C
  • Low Rds On: 11mOhm at 12A, 10V
  • Wide operating temperature range: -55°C to 150°C
  • Surface mount 8-SOIC package

SI4688DY-T1-E3 Applications

  • Power management switching
  • Load switching
  • DC-DC converter applications
  • Low-voltage motor control

SI4688DY-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4688DY-T1-E3?

The maximum drain-source voltage (Vds) is 30V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 8.9A at 25°C.

What is the Rds On at 12A and 10V gate-source voltage?

The Rds On is a maximum of 11mOhm at 12A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI4688DY-T1-E3 supplied in?

It is supplied in an 8-SOIC package.

Is the SI4688DY-T1-E3 halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21.

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