DistyParts Icon
SI4682DY-T1-E3 The Vishay Dale SI4682DY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and 16A continuous drain current. It features a low on-resistance of 9.4mOhm at 16A and 10V gate-source voltage.
Mfr Part #:

SI4682DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4682DY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and 16A continuous drain current. It features a low on-resistance of 9.4mOhm at 16A and 10V gate-source voltage.
✓ Total Stock: 652 pcs
$ Price Range: $0.99

SI4682DY-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
652 pcs
On Request
652 pcs On Request 1 On Request On Request 1004+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI4682DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

SI4682DY-T1-E3 Description

Short technical summary and product information.

This N-Channel MOSFET from Vishay Dale, part number SI4682DY-T1-E3, is designed for power switching applications. It offers a maximum drain-source voltage (Vds) of 30V and can handle a continuous drain current (Id) of 16A. The MOSFET exhibits a low on-resistance (Rds On) of 9.4mOhm when driven at 10V gate-source voltage (Vgs) and carrying 16A.

 

With a gate threshold voltage (Vgs(th)) of 2.5V at 250µA, it operates efficiently across a range of drive voltages. The device has a maximum gate-source voltage of ±20V and features a gate charge (Qg) of 38nC at 10V Vgs. Its input capacitance (Ciss) is rated at 1595pF at 15V Vds.

 

The SI4682DY-T1-E3 is constructed using MOSFET (Metal Oxide) technology. It is packaged in an 8-SOIC (0.154", 3.90mm Width) case and is designed for surface mount applications. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 2.5W (Ta) or 4.45W (Tc).

SI4682DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4682DY-T1-E3 N-Channel MOSFET
Subcategory: N-Channel

SI4682DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4682DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4682DY-T1-E3 Features

  • 30V drain-source voltage rating.
  • 16A continuous drain current capability.
  • Low 9.4mOhm on-resistance.
  • Surface mount 8-SOIC package.
  • Wide operating temperature range.

SI4682DY-T1-E3 Applications

  • Power supply switching circuits.
  • Load switch applications.
  • Motor control modules.
  • Battery management systems.

SI4682DY-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4682DY-T1-E3?

The maximum drain-source voltage (Vds) is 30V.

What is the continuous drain current rating?

The continuous drain current (Id) is 16A.

What is the on-resistance of this MOSFET?

The on-resistance (Rds On) is a maximum of 9.4mOhm at 16A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4682DY-T1-E3 available in?

It is available in an 8-SOIC package designed for surface mounting.

Home
Account

Categories