| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
212,706 pcs
|
212706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Gate Charge | |
| Mounting Style | |
| Power Dissipation | |
| Technology | |
| Transistor Type |
The SI4670DY-T1-E3 from Vishay Siliconix is a dual N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 25V and a maximum gate-source voltage (Vgs) of 16V. The continuous drain current (Id) is rated at 7A, with a typical drain-source on-resistance (Rds On) of 23 mOhms.
This MOSFET operates with a gate-source threshold voltage (Vgs th) of 1V and has a typical gate charge (Qg) of 18 nC. Electrical characteristics include typical rise and fall times of 50 ns and 10 ns respectively, with turn-on and turn-off delay times of 15 ns and 20 ns.
With a power dissipation (Pd) of 2.8W, the device is suitable for operation within a temperature range of -55°C to +150°C. The SI4670DY-T1-E3 is supplied in an SO-8 package with SMD/SMT mounting style, available on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25 V.
SO-8.
-55°C to +150°C.
18 nC.
Rise time 50 ns, fall time 10 ns, turn-on delay 15 ns, turn-off delay 20 ns.
1 V.