| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Intertechnology, Inc. MOSFET, part number SI4642DY-T1-E3, is an N-Channel device designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of up to 34A under specific conditions.
The MOSFET exhibits a maximum on-resistance (Rds On) of 3.75mOhm when driven at 10V with a drain current of 20A. Its gate threshold voltage (Vgs(th)) is 3V at 1mA, and it can withstand gate-to-source voltages up to ±20V. The input capacitance (Ciss) is 5540 pF at 15V, and the gate charge (Qg) is 110 nC at 10V.
Operating within a temperature range of -55°C to 150°C (TJ), this component has a maximum power dissipation of 3.5W when mounted on a PCB (Ta) or 7.8W when measured at the case (Tc). It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount configuration, suitable for various electronic designs requiring efficient power control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
8-SOIC surface mount package.
-55°C to 150°C (junction).
34 A at 10V gate drive.
3.75 mOhm at 20A, 10V.
3 V at 1mA drain current.
110 nC at 10V gate voltage.