DistyParts Icon
SI4618DY-T1-E3 The Vishay Dale SI4618DY-T1-E3 is a dual N-channel MOSFET array with a 30V drain-source voltage rating. It features a low on-resistance of 17mOhm at 8A and 10V.
Mfr Part #:

SI4618DY-T1-E3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4618DY-T1-E3 is a dual N-channel MOSFET array with a 30V drain-source voltage rating. It features a low on-resistance of 17mOhm at 8A and 10V.
✓ Total Stock: 403,914 pcs
$ Price Range: $0.99

SI4618DY-T1-E3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
401,778 pcs
On Request
401778 pcs On Request 1 On Request On Request On Request On Request On Request
Rayichip ✓
Non-Authorised Inventory information
1,022 pcs
On Request
1022 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
960 pcs
On Request
960 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
154 pcs
On Request
154 pcs On Request 1 On Request On Request 1406+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI4618DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
View Similar Products (0)

SI4618DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4618DY-T1-E3 is a dual N-channel MOSFET array designed for various applications. It offers a 30V drain-source voltage and supports continuous drain currents of 8A for Channel-1 and 15.2A for Channel-2.

 

Key electrical characteristics include a maximum on-resistance of 17mOhm at 8A and 10V, and a gate charge of 44nC at 10V. The input capacitance is rated at 1535pF at 15V.

 

This MOSFET array operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC package with a surface mount type, suitable for standard PCB assembly.

 

The device is compliant with RoHS3 standards and has an MSL rating of 1.

SI4618DY-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel 30V MOSFET with Schottky Diode
Subcategory: N-Channel MOSFET Array

SI4618DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4618DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4618DY-T1-E3 Features

  • Dual N-channel MOSFET array.
  • 30V drain-source voltage rating.
  • Low 17mOhm on-resistance.
  • Surface mount 8-SOIC package.
  • RoHS3 compliant.

SI4618DY-T1-E3 Applications

  • Suitable for DC-DC converter power stages.
  • Used in motor drive half-bridge circuits.
  • Ideal for low-voltage power management systems.
  • Employed in high-frequency switching applications.

SI4618DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI4618DY-T1-E3?

The drain-source voltage rating is 30V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What is the package type for this MOSFET?

The package type is 8-SOIC.

What is the maximum on-resistance?

The maximum on-resistance is 17mOhm at Id=8A and Vgs=10V.

What is the continuous drain current rating?

The continuous drain current is 8A, and up to 15.2A under specific conditions.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5V at Id=1mA.

What is the configuration of the MOSFET?

It is a dual N-channel half bridge configuration.

Home

Categories