SI4599DY-T1-GE3 The Vishay Dale SI4599DY-T1-GE3 is an N- and P-Channel MOSFET with a 40V drain-source voltage. It features a surface mount 8-SOIC package.
Mfr Part #:

SI4599DY-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4599DY-T1-GE3 is an N- and P-Channel MOSFET with a 40V drain-source voltage. It features a surface mount 8-SOIC package.
✓ Total Stock: 26,107 pcs
$ Price Range: $0.99

SI4599DY-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
17,572 pcs
17572 pcs On Request 1 On Request On Request 22+ On Request On Request
Non-Authorised Inventory information
8,520 pcs
8520 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
15 pcs
15 pcs On Request 1 On Request On Request On Request On Request On Request

SI4599DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI4599DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4599DY-T1-GE3 is a versatile N- and P-channel MOSFET designed for various applications. It offers a drain-source voltage of 40V and a continuous drain current of up to 6.8A for the N-channel and 5.8A for the P-channel, both rated at 25°C case temperature.

 

Key electrical characteristics include a maximum on-state resistance of 35.5mOhm at 5A and 10V Vgs, and a gate charge of 20nC at 10V Vgs. The input capacitance is rated at 640pF at 20V Vds. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a standard 8-SOIC package, suitable for surface mounting. Its design incorporates TrenchFET technology and a logic-level gate, making it suitable for applications requiring efficient power switching.

 

Applications include backlighting for LCD displays and full bridge converters. The device is also noted as being halogen-free.

SI4599DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N- and P-Channel 40-V (D-S) MOSFET
Subcategory: Arrays

SI4599DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4599DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4599DY-T1-GE3 Features

  • N- and P-Channel MOSFET configuration.
  • 40V drain-to-source voltage rating.
  • Low Rds(on) of 35.5mOhm at 5A, 10V.
  • Surface mount 8-SOIC package.
  • Halogen-free component.

SI4599DY-T1-GE3 Applications

  • Backlight inverter for LCD displays
  • Full bridge converter circuits
  • N- and P-Channel switching applications
  • Surface mount power management designs

SI4599DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI4599DY-T1-GE3?

The drain-to-source voltage is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current is 6.8A for N-Channel and 5.8A for P-Channel at 25°C case temperature.

What is the Rds(on) of the SI4599DY-T1-GE3?

The Rds(on) is a maximum of 35.5mOhm at 5A and 10V Vgs.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI4599DY-T1-GE3 in?

It is in an 8-SOIC package suitable for surface mounting.

Is the SI4599DY-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SI4599DY-T1-GE3 halogen-free?

Yes, the component is halogen-free.

Home
Account

Categories