| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,081 pcs
|
1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
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| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
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| Vgs(th) (Max) @ Id |
The Vishay Dale SI4590DY-T1-GE3 is a dual N- and P-Channel MOSFET array designed for power applications. It features a Drain-Source Voltage (Vdss) of 100V and a low on-resistance of 57mOhm at a gate-source voltage of 10V. The typical gate charge is 11.5nC at 10V.
This MOSFET array is suitable for applications requiring both N-channel and P-channel devices in a single package. It is configured for surface mounting in an 8-SOIC package, making it convenient for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ).
Key electrical characteristics include a continuous drain current of up to 5.6A for the N-channel and -3.4A for the P-channel at 25°C. The input capacitance is 360pF at 50V. Thermal performance is supported by junction-to-ambient thermal resistance ratings of up to 55°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V minimum.
1.5V to 2.5V.
57mOhm maximum at 10V gate drive.
4.5A for N-channel and -2.5A for P-channel at 25°C ambient.
8-SOIC (0.154", 3.90mm Width) surface mount.
-55°C to 150°C junction temperature.
360pF maximum at 50V drain-source voltage.