SI4567DY-T1-E3 The Vishay Dale SI4567DY-T1-E3 is an N/P-Channel MOSFET array with a 40V drain-to-source voltage and a continuous drain current of 5A. It is designed for surface mounting.
Mfr Part #:

SI4567DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4567DY-T1-E3 is an N/P-Channel MOSFET array with a 40V drain-to-source voltage and a continuous drain current of 5A. It is designed for surface mounting.
✓ Total Stock: 200,000 pcs
$ Price Range: $0.99

SI4567DY-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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SI4567DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4567DY-T1-E3 Description

Short technical summary and product information.

The SI4567DY-T1-E3 from Vishay Dale is a versatile N and P-Channel MOSFET array designed for a wide range of electronic applications. This component features a drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current (Id) of up to 5A for the N-channel and 4.4A for the P-channel at 25°C. Its on-resistance (Rds On) is a maximum of 60mOhm at 4.1A and 10V gate-source voltage.

 

With a gate threshold voltage (Vgs(th)) of 2.2V at 250µA and a gate charge (Qg) of 12nC at 10V, this MOSFET array offers efficient switching characteristics. The input capacitance (Ciss) is a maximum of 355pF at 20V.

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) case, the SI4567DY-T1-E3 is designed for surface mounting, making it suitable for compact PCB designs. It operates within a temperature range of -55°C to 150°C (TJ), ensuring reliability in demanding environments. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI4567DY-T1-E3 Quick Information

Product Type: MOSFET Array
Series: TrenchFET®
Canonical Name: N and P-Channel MOSFET
Subcategory: Array

SI4567DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4567DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4567DY-T1-E3 Features

  • N and P-Channel MOSFET array.
  • 40V drain-to-source voltage.
  • 5A continuous drain current.
  • Surface mount 8-SOIC package.
  • RoHS3 compliant.

SI4567DY-T1-E3 Applications

  • Ideal for power management circuits.
  • Suitable for switching applications.
  • Used in battery powered devices.
  • Effective in load switch designs.
  • Applicable in portable electronics.

SI4567DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI4567DY-T1-E3?

The drain-to-source voltage (Vdss) for the SI4567DY-T1-E3 is 40V.

What is the continuous drain current of the SI4567DY-T1-E3?

The continuous drain current (Id) at 25°C is 5A for the N-channel and 4.4A for the P-channel.

What is the maximum on-resistance for this MOSFET array?

The maximum on-resistance (Rds On) is 60mOhm at 4.1A and 10V gate-source voltage.

What is the operating temperature range of the SI4567DY-T1-E3?

The operating temperature range is -55°C to 150°C (TJ).

What type of package is the SI4567DY-T1-E3 in?

The SI4567DY-T1-E3 is in an 8-SOIC (0.154", 3.90mm Width) package.

How is the SI4567DY-T1-E3 mounted?

The SI4567DY-T1-E3 is designed for surface mounting.

Is the SI4567DY-T1-E3 RoHS compliant?

Yes, the SI4567DY-T1-E3 is RoHS3 compliant.

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