| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,873 pcs
|
32873 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
16,020 pcs
|
16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,669 pcs
|
1669 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
26 pcs
|
26 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4564DY-T1-GE3 is a versatile MOSFET array comprising both N-channel and P-channel transistors. It is rated for a 40V Drain-Source Voltage (Vds) and supports continuous drain currents of up to 10A for the N-channel and 9.2A for the P-channel at 25°C.
This device offers a low on-state resistance of 17.5mOhm at 8A and 10V Vgs, contributing to efficient power handling. The gate charge (Qg) is a maximum of 31nC at 10V Vgs, and the input capacitance (Ciss) is 855pF at 20V Vds.
The SI4564DY-T1-GE3 is housed in a standard 8-SOIC package, suitable for surface mounting. It operates across a wide temperature range from -55°C to 150°C (TJ). The MOSFET array is also characterized by its logic-level gate feature, enhancing design flexibility.
This component is compliant with RoHS3 standards and is halogen-free, making it suitable for environmentally conscious designs. It is designed for applications requiring integrated N- and P-channel MOSFETs in a compact footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (Vds) is 40V.
The Vgs(th) is a maximum of 2V at 250µA.
The maximum Gate Charge (Qg) is 31nC at 10V Vgs.
The maximum Rds On is 17.5mOhm when measured at 8A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is available in an 8-SOIC package suitable for surface mounting.
Yes, it is RoHS3 Compliant.