SI4562DY-T1-E3 The SI4562DY-T1-E3 is an N and P-Channel MOSFET array from Vishay Dale, featuring a 20V drain-source voltage and 25mOhm maximum on-resistance. It is housed in an 8-SOIC surface mount package.
Mfr Part #:

SI4562DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The SI4562DY-T1-E3 is an N and P-Channel MOSFET array from Vishay Dale, featuring a 20V drain-source voltage and 25mOhm maximum on-resistance. It is housed in an 8-SOIC surface mount package.
✓ Total Stock: 55 pcs
$ Price Range: $0.99

SI4562DY-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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55 pcs
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SI4562DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4562DY-T1-E3 Description

Short technical summary and product information.

The SI4562DY-T1-E3 is an N and P-Channel MOSFET array manufactured by Vishay Siliconix in the TrenchFET® series. This device integrates dual complementary MOSFETs in an 8-SOIC surface mount package with a maximum drain-source voltage rating of 20V and maximum power dissipation of 2W.

 

Key electrical parameters include a maximum on-resistance of 25mOhm at 7.1A and 4.5V, and a gate threshold voltage of 1.6V at 250µA. The gate charge is a maximum of 50nC at 4.5V. The device operates within a temperature range of -55°C to 150°C.

 

This part is classified as obsolete, and substitute parts are available that maintain functional compatibility. Substitute parts must match or exceed key electrical parameters, preserve the same package form factor, and operate within the same thermal range. Primary compatibility requirements include the N and P-Channel MOSFET array configuration, 8-SOIC surface mount package, and an operating temperature range of -55°C to 150°C.

 

The SI4562DY-T1-E3 is RoHS3 compliant and has an MSL Level 1 rating. It is suitable for applications requiring complementary MOSFETs in a compact surface mount package.

SI4562DY-T1-E3 Quick Information

Product Type: MOSFET Array
Series: TrenchFET®
Canonical Name: SI4562DY-T1-E3 N and P-Channel MOSFET Array
Subcategory: Transistors - FETs, MOSFETs - Arrays

SI4562DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4562DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4562DY-T1-E3 Features

  • N and P-Channel MOSFET array configuration.
  • 20V maximum drain-source voltage.
  • 25mOhm maximum on-resistance.
  • Operates from -55°C to 150°C.
  • 8-SOIC surface mount package.

SI4562DY-T1-E3 Applications

  • Suitable for complementary MOSFET applications.
  • Used in space-constrained designs.
  • Ideal for power management circuits.
  • Logic-level gate control.

SI4562DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI4562DY-T1-E3?

20V.

What is the maximum on-resistance of the SI4562DY-T1-E3?

25mOhm at 7.1A drain current and 4.5V gate-to-source voltage.

What is the maximum gate threshold voltage of the SI4562DY-T1-E3?

1.6V at 250µA drain current.

What package type is the SI4562DY-T1-E3 offered in?

8-SOIC (0.154", 3.90mm width), surface mount.

What is the operating temperature range of the SI4562DY-T1-E3?

-55°C to 150°C junction temperature.

Does the SI4562DY-T1-E3 contain both N-channel and P-channel MOSFETs?

Yes, it has an N and P-Channel configuration.

What is the maximum gate charge of the SI4562DY-T1-E3?

50nC at 4.5V gate-to-source voltage.

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