SI4559ADY-T1-GE3 The Vishay Dale SI4559ADY-T1-GE3 is an N/P-Channel MOSFET with a 60V drain-to-source voltage and a continuous drain current of 5.3A. It is supplied in an 8-SOIC package.
Mfr Part #:

SI4559ADY-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4559ADY-T1-GE3 is an N/P-Channel MOSFET with a 60V drain-to-source voltage and a continuous drain current of 5.3A. It is supplied in an 8-SOIC package.
✓ Total Stock: 49,101 pcs
$ Price Range: $0.99

SI4559ADY-T1-GE3 Available from 3 distributors

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✓ Non-Authorised
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45,200 pcs
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2,774 pcs
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1,127 pcs
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SI4559ADY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4559ADY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4559ADY-T1-GE3 is a MOSFET designed for various electronic applications. It features N and P-channel configuration, with a maximum drain-to-source voltage (Vdss) of 60V and continuous drain currents of 5.3A for one channel and 3.9A for the other. The on-resistance (Rds On) is a maximum of 58mOhm at 4.3A and 10V.

 

This MOSFET has a gate charge (Qg) of 20nC at 10V and an input capacitance (Ciss) of 665pF at 15V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).

 

The device is packaged in an 8-SOIC (0.154", 3.90mm Width) format and is designed for surface mounting. It is classified as RoHS3 Compliant with an MSL of 1 Unlimited and REACH Unaffected status.

SI4559ADY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4559ADY-T1-GE3 N and P-Channel MOSFET
Subcategory: Arrays

SI4559ADY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4559ADY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4559ADY-T1-GE3 Features

  • N and P-Channel MOSFET configuration.
  • 60V drain-to-source voltage rating.
  • 5.3A maximum continuous drain current.
  • 58mOhm maximum Rds On at 4.3A, 10V.
  • Surface mount 8-SOIC package.

SI4559ADY-T1-GE3 Applications

  • Suitable for power switching applications.
  • Ideal for complementary MOSFET designs.
  • Used in battery management circuits.
  • Applicable in load switch designs.

SI4559ADY-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI4559ADY-T1-GE3?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 5.3A for one channel and 3.9A for the other.

What is the Rds On for this MOSFET?

The Rds On is a maximum of 58mOhm at 4.3A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What type of MOSFET is the SI4559ADY-T1-GE3?

It is an N and P-Channel MOSFET with a logic level gate feature.

What package is the SI4559ADY-T1-GE3 in?

It is supplied in an 8-SOIC package designed for surface mounting.

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