SI4559ADY-T1-E3 The Vishay Dale SI4559ADY-T1-E3 is a MOSFET array featuring N and P-channel configurations with a 60V drain-to-source voltage. It is designed for surface mounting in an 8-SOIC package.
Mfr Part #:

SI4559ADY-T1-E3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4559ADY-T1-E3 is a MOSFET array featuring N and P-channel configurations with a 60V drain-to-source voltage. It is designed for surface mounting in an 8-SOIC package.
✓ Total Stock: 260,125 pcs
$ Price Range: $0.99

SI4559ADY-T1-E3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
258,286 pcs
258286 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,589 pcs
1589 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
230 pcs
230 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
20 pcs
20 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

SI4559ADY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4559ADY-T1-E3 Description

Short technical summary and product information.

The SI4559ADY-T1-E3 from Vishay Dale is a versatile MOSFET array that integrates both N-channel and P-channel transistors. It offers a drain-to-source voltage (Vdss) of 60V and continuous drain current ratings of 5.3A for the N-channel and 3.9A for the P-channel, respectively.

 

Key electrical characteristics include a low on-resistance (Rds On) of 58 mOhm at 4.3A and 10V, a gate threshold voltage (Vgs(th)) of 3V maximum at 250µA, and a gate charge (Qg) of 20nC maximum at 10V. The input capacitance (Ciss) is rated at 665pF maximum at 15V. This device features a logic level gate for easier control.

 

Designed for surface mounting, the SI4559ADY-T1-E3 comes in an 8-SOIC package with dimensions of 0.154" (3.90mm) width. It operates across a wide temperature range from -55°C to 150°C (TJ), making it suitable for various environmental conditions. The power dissipation is rated at 3.1W and 3.4W.

 

This MOSFET array is compliant with RoHS3 standards and has an MSL rating of 1 (Unlimited). Its construction and specifications make it suitable for applications requiring efficient switching and power management.

SI4559ADY-T1-E3 Quick Information

Product Type: MOSFET Array
Series: TrenchFET®
Canonical Name: SI4559ADY-T1-E3 N and P-Channel MOSFET
Subcategory: N and P-Channel

SI4559ADY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4559ADY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4559ADY-T1-E3 Features

  • N and P-Channel MOSFET array.
  • 60V drain-to-source voltage rating.
  • 5.3A and 3.9A continuous drain current.
  • Low 58mOhm on-resistance.
  • Surface mount 8-SOIC package.

SI4559ADY-T1-E3 Applications

  • Ideal for power switching circuits.
  • Suitable for battery management systems.
  • Used in load switch applications.
  • Applicable for voltage level shifting.

SI4559ADY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI4559ADY-T1-E3?

60V.

What is the package type of the SI4559ADY-T1-E3?

8-SOIC surface mount package.

What is the operating temperature range?

-55°C to 150°C.

What is the FET type of the SI4559ADY-T1-E3?

N and P-Channel.

What is the maximum on-resistance?

58 mOhm at 4.3A drain current and 10V gate drive.

What is the gate charge of the device?

20 nC at 10V gate voltage.

What is the input capacitance?

665 pF at 15V drain-source voltage.

Home
Account

Categories