SI4554DY-T1-GE3 The Vishay Dale SI4554DY-T1-GE3 is a dual N- and P-channel MOSFET with a 40V Drain-Source Voltage and 8A continuous drain current. It features a low Rds On of 24mOhm at 6.8A and 10V.
Mfr Part #:

SI4554DY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4554DY-T1-GE3 is a dual N- and P-channel MOSFET with a 40V Drain-Source Voltage and 8A continuous drain current. It features a low Rds On of 24mOhm at 6.8A and 10V.
✓ Total Stock: 2,122 pcs
$ Price Range: $0.99

SI4554DY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,487 pcs
1487 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
635 pcs
635 pcs On Request 1 On Request On Request 1622+ On Request On Request

SI4554DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4554DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4554DY-T1-GE3 is a versatile MOSFET designed for various applications. It integrates both N-channel and P-channel transistors within a single 8-Pin SOIC package, offering convenience and space savings.

 

This device boasts a 40V Drain-Source Voltage rating and can handle a continuous drain current of up to 8A. Its low on-resistance, specified at 24mOhm maximum at 6.8A and 10V, ensures efficient power delivery with minimal losses.

 

The MOSFET operates within a wide temperature range of -55°C to 150°C, making it suitable for demanding environments. It is surface-mounted and features a logic-level gate, simplifying drive requirements.

 

Key electrical characteristics include a typical gate charge of 20nC at 10V and an input capacitance of 690pF at 20V. The device is also compliant with RoHS 3 standards and is halogen-free.

SI4554DY-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Dual N-Channel and P-Channel 40V MOSFET
Subcategory: N and P-Channel

SI4554DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4554DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4554DY-T1-GE3 Features

  • Dual N and P-channel MOSFET configuration.
  • 40V Drain-Source Voltage rating.
  • 8A maximum continuous drain current.
  • Low Rds On of 24mOhm at 6.8A, 10V.
  • 8-Pin SOIC surface mount package.

SI4554DY-T1-GE3 Applications

  • Suitable for motor drive applications.
  • Ideal for power switching circuits.
  • Used in battery management systems.
  • Applicable for load switching.

SI4554DY-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the SI4554DY-T1-GE3?

The maximum continuous drain current is 8A.

What is the Drain-Source Voltage of the SI4554DY-T1-GE3?

The Drain-Source Voltage is 40V.

What is the Rds On for the SI4554DY-T1-GE3?

The Rds On is a maximum of 24mOhm at 6.8A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI4554DY-T1-GE3 in?

It is in an 8-Pin SOIC package.

Is the SI4554DY-T1-GE3 RoHS compliant?

Yes, it is RoHS 3 compliant.

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