| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
231 pcs
|
231 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI4542DY is a complementary N-channel and P-channel MOSFET manufactured by ON Semiconductor. This device features a 30V drain-to-source voltage (Vdss) and can handle up to 6A of current. It is packaged in an 8-SOIC (Small Outline Integrated Circuit) package, suitable for surface mounting.
The MOSFET operates within a temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a maximum on-resistance of 28mOhm at 6A and 10V, an input capacitance (Ciss) of 830pF at 15V, and a gate charge (Qg) of 13nC at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA.
This component is designed for various electronic applications requiring efficient switching and power management. Its complementary nature allows for flexible circuit design in applications such as power supplies, motor control, and load switching. The surface mount package facilitates integration into compact electronic assemblies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
6A.
8-SOIC (0.154" width, 3.90mm width) surface-mount package.
-55°C to 175°C (junction).
Dual N and P-Channel.
28 mOhm at 6A and 10V gate drive.
3V maximum at 250µA.