| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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547,879 pcs
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547879 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI4539ADY-T1-E3 from Vishay Dale is an N/P-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 30V and can handle currents up to 4.4A. The MOSFET has a low on-resistance of 36mOhm at 5.9A and 10V, with a gate charge of 20nC at 10V.
This component operates within a temperature range of -55°C to 150°C (TJ) and is housed in an 8-SOIC package suitable for surface mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, and it features a logic-level gate for easier integration into low-voltage systems. The RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
With its N and P-channel configuration, the SI4539ADY-T1-E3 is versatile for applications requiring complementary switching. The power dissipation is rated at 1.1W. This MOSFET is a reliable choice for power management and switching circuits where space and performance are critical.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
4.4A for N-Channel and 3.7A for P-Channel.
36mOhm maximum at 5.9A and 10V gate drive.
-55°C to 150°C junction temperature.
8-SOIC (0.154", 3.90mm width) surface mount package.
Maximum 1V at 250µA drain current.
Maximum 20nC at 10V gate voltage.