SI4532ADY-T1-E3 The Vishay Dale SI4532ADY-T1-E3 is an N- and P-channel MOSFET array in an 8-SOIC package. It offers a 30V drain-source voltage and a continuous drain current up to 3.7A.
Mfr Part #:

SI4532ADY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4532ADY-T1-E3 is an N- and P-channel MOSFET array in an 8-SOIC package. It offers a 30V drain-source voltage and a continuous drain current up to 3.7A.
✓ Total Stock: 120,533 pcs
$ Price Range: $0.99

SI4532ADY-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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120,533 pcs
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SI4532ADY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4532ADY-T1-E3 Description

Short technical summary and product information.

This N- and P-channel MOSFET array from Vishay Dale, part number SI4532ADY-T1-E3, is designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 3.7A for the N-channel and 3.0A for the P-channel at 25°C.

 

The device exhibits a low on-resistance (Rds(on)) of 53mOhm at 4.9A and 10V Vgs for the N-channel, and 80mOhm at -3.9A and -10V Vgs for the P-channel. The gate threshold voltage (Vgs(th)) is 1V for N-channel and -1V for P-channel at 250µA.

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount configuration, this MOSFET array operates within a temperature range of -55°C to 150°C (TJ). It is suitable for applications requiring both N-channel and P-channel MOSFETs in a single package, simplifying circuit design and reducing board space.

 

The SI4532ADY-T1-E3 is compliant with RoHS Directive 2002/95/EC and is halogen-free, making it suitable for environmentally conscious designs.

SI4532ADY-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: N- and P-Channel 30 V (D-S) MOSFET
Subcategory: N- and P-Channel

SI4532ADY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4532ADY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4532ADY-T1-E3 Features

  • N- and P-Channel MOSFET array
  • 30V Drain-Source Voltage
  • Low On-Resistance
  • Logic Level Gate Feature
  • 8-SOIC Surface Mount Package

SI4532ADY-T1-E3 Applications

  • Power management circuits
  • Load switch applications
  • Battery protection circuits
  • General purpose switching

SI4532ADY-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4532ADY-T1-E3?

The maximum drain-source voltage is 30 V.

What is the continuous drain current for the N-channel and P-channel?

The continuous drain current is 4.9 A for N-channel and -3.9 A for P-channel at 25°C.

What is the typical on-resistance of the SI4532ADY-T1-E3?

The N-channel on-resistance is 53mOhm at 4.9A, 10V Vgs, and the P-channel is 80mOhm at -3.9A, -10V Vgs.

What is the operating temperature range for this MOSFET array?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4532ADY-T1-E3 supplied in?

It is supplied in an 8-SOIC package for surface mounting.

Is the SI4532ADY-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

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