| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,580 pcs
|
1580 pcs | On Request | 1 | On Request | On Request | 1122+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI4511DY-T1-E3 from Vishay Dale is a versatile MOSFET designed for N and P-channel applications. It offers a drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current of up to 7.2A. The device features a low on-resistance (Rds On) of 14.5mOhm at 9.6A and 10V, and a gate charge (Qg) of 18nC at 4.5V.
This MOSFET is suitable for logic-level gate applications, indicated by its Vgs(th) of 1.8V at 250µA. It has a power dissipation rating of 1.1W and is housed in a compact 8-SOIC (Surface Mount) package, measuring 0.154" (3.90mm) in width. The surface mount capability makes it ideal for integration into compact electronic designs.
Key electrical characteristics include its 20V operating voltage and 7.2A current handling. The N and P-channel configuration provides flexibility in circuit design. Its logic-level gate feature simplifies interfacing with microcontrollers and other low-voltage logic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 20V.
The maximum continuous drain current is 7.2A.
The device is available in an 8-SOIC surface-mount package.
Yes, it features a logic level gate for low-voltage drive.
The maximum on-resistance is 14.5 mOhm at 9.6A and 10V.