SI4501DY-T1 The Vishay SI4501DY-T1 is an N/P-channel MOSFET designed for various electronic applications. It features a 30V/8V drain-source voltage and a surface-mount 8-SOIC package.
Mfr Part #:

SI4501DY-T1

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SI4501DY-T1 is an N/P-channel MOSFET designed for various electronic applications. It features a 30V/8V drain-source voltage and a surface-mount 8-SOIC package.
✓ Total Stock: 6,000 pcs

SI4501DY-T1 Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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6,000 pcs
6000 pcs On Request 1 On Request On Request 0316+ On Request On Request

SI4501DY-T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SI4501DY-T1 Description

Short technical summary and product information.

The Vishay SI4501DY-T1 is a versatile N/P-channel MOSFET suitable for a wide range of applications. It offers a drain-source voltage of 30V for the N-channel and 8V for the P-channel, with continuous drain currents of 12A and 8A respectively at 25°C.

 

Key electrical characteristics include a low on-resistance of 17 mOhm for the N-channel and 21 mOhm for the P-channel at specified test conditions. The device supports logic-level gate operation and has an input capacitance of 805pF and a gate charge of 25nC.

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) case, the SI4501DY-T1 is designed for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is a component from Vishay's TrenchFETR series, known for their efficiency and performance.

SI4501DY-T1 Quick Information

Product Type: MOSFET
Canonical Name: SI4501DY-T1 N/P-Channel MOSFET
Subcategory: N/P-Channel

SI4501DY-T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4501DY-T1 Features

  • N/P-channel MOSFET with 30V/8V Vds.
  • High continuous drain current capability.
  • Low on-resistance for efficient operation.
  • Logic level gate for wider compatibility.
  • Surface mount 8-SOIC package.

SI4501DY-T1 Applications

  • Used in low-voltage power management circuits.
  • Ideal for load switching in portable devices.
  • Suitable for DC-DC converter designs.
  • Complementary switching for bridge circuits.
  • Reduces board space in dual-channel applications.

SI4501DY-T1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the N and P-Channel?

The N-Channel has a drain-source voltage of 30V, and the P-Channel has 8V.

What package is the SI4501DY-T1 available in?

The device is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What is the gate threshold voltage?

Maximum 2V at Id=250μA.

What are the continuous drain current ratings?

12A for N-Channel at 25°C, 8A for P-Channel at 25°C.

What is the on-resistance of the MOSFET?

17 mOhm for N-Channel at 10A, 10V; 21 mOhm for P-Channel at 8A, 10V.

What is the input capacitance?

Typical input capacitance is 805pF at Vds=15V.

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