| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 0316+ | On Request | On Request |
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| SVHC Present | |
| Tape & Reel |
The Vishay SI4501DY-T1 is a versatile N/P-channel MOSFET suitable for a wide range of applications. It offers a drain-source voltage of 30V for the N-channel and 8V for the P-channel, with continuous drain currents of 12A and 8A respectively at 25°C.
Key electrical characteristics include a low on-resistance of 17 mOhm for the N-channel and 21 mOhm for the P-channel at specified test conditions. The device supports logic-level gate operation and has an input capacitance of 805pF and a gate charge of 25nC.
Packaged in an 8-SOIC (0.154", 3.90mm Width) case, the SI4501DY-T1 is designed for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is a component from Vishay's TrenchFETR series, known for their efficiency and performance.
The N-Channel has a drain-source voltage of 30V, and the P-Channel has 8V.
The device is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
-55°C to 150°C (junction temperature).
Maximum 2V at Id=250μA.
12A for N-Channel at 25°C, 8A for P-Channel at 25°C.
17 mOhm for N-Channel at 10A, 10V; 21 mOhm for P-Channel at 8A, 10V.
Typical input capacitance is 805pF at Vds=15V.