| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,296 pcs
|
2296 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
660 pcs
|
660 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4501BDY-T1-GE3 is a complementary N- and P-Channel MOSFET array designed for applications such as level shifting and load switching. This device features a breakdown voltage of 30V for the N-channel and -8V for the P-channel, with a continuous drain current capability of 12A for the N-channel and -8A for the P-channel.
The MOSFET array has a low on-resistance of 17mOhm at 10A and 10V, and a typical gate charge of 25nC at 10V. It is housed in a compact 8-SOIC surface mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ).
Key electrical characteristics include an input capacitance of 805pF at 15V and a gate threshold voltage of up to 2V for the N-channel and -0.9V for the P-channel. The device supports logic-level gate drive, enhancing its versatility in various circuit designs. Its power dissipation is rated at 4.5W for the N-channel and 3.1W for the P-channel at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel has a minimum breakdown voltage of 30V, and the P-channel has a maximum breakdown voltage of -8V (VGS=0V).
At TC=25°C, the N-channel can handle 12A and the P-channel -8A.
The maximum on-resistance is 17mOhm at ID=10A and VGS=10V.
The junction temperature range is -55°C to 150°C.
It comes in an 8-SOIC surface-mount package (Supplier Device Package: 8-SOIC).
The N-channel maximum threshold is 2V at 250µA, the P-channel minimum threshold is -0.9V at -250µA.
Yes, it features a logic level gate, enabling direct drive from low-voltage logic signals.