| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,930 pcs
|
1930 pcs | On Request | 1 | On Request | On Request | 1013 | On Request | On Request | |
|
1,012 pcs
|
1012 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
195 pcs
|
195 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI4501ADY-T1-E3 from Vishay Siliconix is a MOSFET array designed for various electronic applications. This component features both N-Channel and P-Channel MOSFETs with a common drain configuration, offering flexibility in circuit design. It supports a drain-to-source voltage of 30V for the N-channel and 8V for the P-channel, with continuous drain currents of 6.3A and 4.1A respectively.
The MOSFET array has a low on-resistance of 18mOhm at 8.8A and 10V, and a gate charge of 20nC at 5V. The gate threshold voltage is a maximum of 1.8V at 250µA, and it utilizes a logic level gate for compatibility with lower voltage control signals. The operating temperature range is from -55°C to 150°C (TJ).
This device is packaged in an 8-SOIC (Small Outline Integrated Circuit) surface-mount package, measuring 0.154 inches or 3.90mm in width. The power dissipation is rated at 1.3W. The SI4501ADY-T1-E3 is suitable for applications requiring efficient switching and power management within its specified electrical and thermal limits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel is rated for 30V and the P-channel for 8V.
The maximum on-resistance is 18mOhm at 8.8A drain current and 10V gate drive.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC surface-mount package with a 3.90mm body width.
The maximum gate threshold voltage is 1.8V at 250µA drain current.
The N-channel is rated for 6.3A and the P-channel for 4.1A continuous drain current.
The maximum gate charge is 20nC at 5V gate voltage.