| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,298 pcs
|
1298 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,012 pcs
|
1012 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4497DY-T1-GE3 is a P-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 36A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds On) of 3.3mOhm at 20A drain current and 10V gate-source voltage. The gate charge (Qg) is typically 90nC. The device operates over a wide temperature range from -55°C to +150°C.
Packaged in an 8-SOIC surface mount package, the SI4497DY-T1-GE3 is suitable for applications requiring high current load switching and adaptors. Its TrenchFET® power MOSFET technology ensures efficient performance. The device is also 100% Rg and UIS tested.
Key electrical characteristics include a gate-source voltage (Vgs) range of ±20V and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. Power dissipation is rated at 7.8W (Tc) and 3.5W (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 36A at 25°C case temperature.
The Rds On is a maximum of 3.3mOhm at 20A drain current and 10V gate-source voltage.
This MOSFET is supplied in an 8-SOIC package.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.