SI4491EDY-T1-GE3 The Vishay Dale SI4491EDY-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a 30V drain-source voltage and a low on-resistance.
Mfr Part #:

SI4491EDY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4491EDY-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a 30V drain-source voltage and a low on-resistance.
✓ Total Stock: 226 pcs
$ Price Range: $0.99

SI4491EDY-T1-GE3 Available from 1 distributor

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226 pcs
226 pcs On Request 1 On Request On Request 16+ On Request On Request

SI4491EDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4491EDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4491EDY-T1-GE3 is a P-Channel MOSFET with a drain-source voltage (Vds) of 30V. It offers a low Rds(on) of 6.5mΩ at 13A and 10V Vgs, making it suitable for efficient power switching.

 

This MOSFET is designed for applications such as adaptor switches and load switches, commonly found in notebook computers and portable battery packs. It features an extended Vgs range of ±25V and is built using Vishay's TrenchFET® power MOSFET technology.

 

The device comes in an 8-SOIC surface-mount package, measuring 0.154" (3.90mm) in width. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 3.1W (Ta) or 6.9W (Tc).

 

Key electrical characteristics include a typical gate charge (Qg) of 66nC and an input capacitance (Ciss) of 4620pF. The device is also 100% Rg and UIS tested, with typical ESD performance of 4000V (HBM).

SI4491EDY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 30 V (D-S) MOSFET
Subcategory: P-Channel

SI4491EDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI4491EDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4491EDY-T1-GE3 Features

  • P-Channel 30V MOSFET for power switching.
  • Low Rds(on) of 6.5mΩ at 13A, 10V.
  • Extended Vgs range of ±25V.
  • 8-SOIC surface mount package.
  • Lead (Pb)-free and halogen-free.

SI4491EDY-T1-GE3 Applications

  • Used in adaptor switch applications.
  • Suitable for load switch functions.
  • Ideal for power management circuits.
  • Designed for notebook computers.
  • Applicable to portable battery packs.

SI4491EDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4491EDY-T1-GE3?

The drain-source voltage (Vds) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is -25.8A at TC = 25°C.

What is the Rds On resistance at 13A and 10V Vgs?

The Rds On resistance is a maximum of 6.5mΩ at 13A and 10V Vgs.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4491EDY-T1-GE3 in?

It is in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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