| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45,200 pcs
|
45200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4490DY-T1-GE3 is an N-channel enhancement-mode Power MOSFET manufactured by Vishay Dale. It is designed for applications requiring high voltage and moderate current handling capabilities.
Key electrical specifications include a maximum Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 2.85A at ambient temperature. The On-State Resistance (Rds On) is specified as a maximum of 80mOhm when driven at 10V with a 4A drain current. The Gate Threshold Voltage (Vgs(th)) is a maximum of 2V at 250µA, and the maximum Gate-to-Source Voltage (Vgs) is ±20V. Gate charge is 42nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC package with a surface mount mounting type. The power dissipation is rated at a maximum of 1.56W at ambient temperature.
Applications for this component include drivers for relays, solenoids, lamps, hammers, displays, and memories, as well as use in battery-operated systems, power supply converter circuits, and load/power switching in devices like cell phones and pagers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 200 V.
The continuous drain current is 2.85A.
The maximum on-resistance is 80mOhm at 4A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C.
It is supplied in an 8-SOIC package.
The status is RoHS3 Compliant.