| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
859 pcs
|
859 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4490DY-T1-E3 is a single N-Channel MOSFET designed for various electronic applications. It features a high drain-to-source voltage (Vdss) of 200V and can handle a continuous drain current of 2.85A at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 80mOhm at 4A and 10V, and a gate threshold voltage (Vgs(th)) of 2V minimum at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is packaged in an 8-SOIC (0.154", 3.90mm Width) case and is designed for surface mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor principles. The maximum power dissipation is rated at 1.56W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current is 2.85A at ambient temperature.
The maximum on-resistance is 80mOhm at Vgs=10V and Id=4A.
It is available in an 8-SOIC surface mount package (0.154", 3.90mm Width).
The operating junction temperature range is -55°C to 150°C.
The maximum gate charge is 42nC at Vgs=10V.
The minimum gate threshold voltage is 2V at Id=250µA.