| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,020 pcs
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11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Vishay Dale SI4488DY-T1-GE3 is a single N-Channel MOSFET from the Transistors - FETs, MOSFETs - Single category. It features a maximum drain-to-source voltage (Vdss) of 150V and a continuous drain current of 3.5A at ambient temperature. The MOSFET has a low on-resistance of 50mOhm at 5A and 10V gate-source voltage, with a gate charge of 36 nC at 10V.
The device operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-SOIC package and utilizes surface mount technology. The maximum power dissipation is rated at 1.56W (Ta). The gate-source voltage (Vgs) maximum is ±20V, and the gate threshold voltage (Vgs(th)) is a minimum of 2V at 250µA.
This MOSFET is suitable for various electronic applications requiring efficient switching and power control. Its robust specifications and surface mount package make it a versatile component for circuit design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
3.5A at ambient temperature.
50mOhm maximum at 5A and Vgs=10V.
36nC at Vgs=10V.
-55°C to 150°C (junction).
8-SOIC (0.154", 3.90mm width) surface mount package.
2V minimum at 250µA.