SI4488DY-T1-E3 The Vishay Dale SI4488DY-T1-E3 is an N-Channel MOSFET with a 150V drain-to-source voltage and a continuous drain current of 3.5A. It features a low on-resistance of 50mOhm at 5A, 10V.
Mfr Part #:

SI4488DY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4488DY-T1-E3 is an N-Channel MOSFET with a 150V drain-to-source voltage and a continuous drain current of 3.5A. It features a low on-resistance of 50mOhm at 5A, 10V.
✓ Total Stock: 28,413 pcs
$ Price Range: $0.99

SI4488DY-T1-E3 Available from 3 distributors

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✓ Non-Authorised
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26,020 pcs
26020 pcs On Request 1 On Request On Request On Request On Request On Request
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1,900 pcs
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493 pcs
493 pcs On Request 1 On Request On Request 10+ On Request On Request

SI4488DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4488DY-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI4488DY-T1-E3 is an N-Channel MOSFET designed for surface mount applications. It offers a drain-to-source voltage (Vdss) of 150V and can handle a continuous drain current (Id) of 3.5A at ambient temperature.

 

The MOSFET has a maximum on-resistance (Rds On) of 50mOhm when driven at 5A with a 10V gate-to-source voltage. Its gate charge (Qg) is 36 nC at 10V, and the gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA.

 

Operating within a temperature range of -55°C to 150°C (TJ), this component is housed in an 8-SOIC package with a width of 0.154 inches (3.90mm). The maximum power dissipation is rated at 1.56W (Ta).

 

Compliance includes RoHS3, MSL 1 Unlimited, and REACH Unaffected. The part is suitable for various electronic designs requiring a robust N-channel MOSFET in a compact surface-mount form factor.

SI4488DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4488DY-T1-E3 N-Channel MOSFET
Subcategory: N-Channel

SI4488DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4488DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4488DY-T1-E3 Features

  • 150V drain-to-source voltage.
  • 3.5A continuous drain current.
  • 50mOhm maximum on-resistance.
  • Surface mount 8-SOIC package.
  • Operates from -55°C to 150°C.

SI4488DY-T1-E3 Applications

  • Suitable for DC-DC converter circuits
  • Used in power management for portable devices
  • Ideal for load switching applications
  • Applicable in motor control driver stages
  • Can be used in battery protection circuits

SI4488DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SI4488DY-T1-E3?

The maximum drain-to-source voltage (Vdss) is 150V.

What is the continuous drain current of the SI4488DY-T1-E3?

The continuous drain current (Id) is 3.5A at ambient temperature.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 50mOhm at 5A, 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4488DY-T1-E3 in?

It is in an 8-SOIC package, measuring 0.154 inches (3.90mm) in width.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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