SI4486EY-T1-E3 The Vishay Siliconix SI4486EY-T1-E3 is an N-Channel MOSFET designed for 100V applications. It features a low on-state resistance and a compact 8-SOIC package.
Mfr Part #:

SI4486EY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI4486EY-T1-E3 is an N-Channel MOSFET designed for 100V applications. It features a low on-state resistance and a compact 8-SOIC package.
✓ Total Stock: 260,746 pcs
$ Price Range: $0.99

SI4486EY-T1-E3 Available from 3 distributors

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258,286 pcs
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SI4486EY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4486EY-T1-E3 Description

Short technical summary and product information.

The Vishay Siliconix SI4486EY-T1-E3 is an N-Channel Power MOSFET designed for efficient power switching applications. It offers a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 5.4A at 25°C ambient temperature.

 

This MOSFET boasts a low drain-source on-state resistance (Rds(on)) of 25mΩ at a gate-source voltage (Vgs) of 10V and a drain current of 7.9A. The gate threshold voltage (Vgs(th)) is 2V (min) at 250µA. It operates within a wide temperature range of -55°C to 175°C.

 

The SI4486EY-T1-E3 is housed in an 8-SOIC package, suitable for surface mounting. Its TrenchFET technology and PWM optimization contribute to its performance characteristics. The device is also halogen-free, complying with IEC 61249-2-21 standards.

SI4486EY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SI4486EY N-Channel 100V MOSFET
Subcategory: N-Channel

SI4486EY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4486EY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4486EY-T1-E3 Features

  • N-Channel 100V Power MOSFET
  • Low Rds(on) of 25mΩ at 7.9A, 10V
  • Continuous Drain Current of 5.4A
  • Wide operating temperature range
  • Surface mount 8-SOIC package

SI4486EY-T1-E3 Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management systems.
  • Ideal for load switching applications.
  • Optimized for PWM switching topologies.

SI4486EY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4486EY-T1-E3?

The drain-source voltage (Vds) for the SI4486EY-T1-E3 is 100V.

What is the maximum continuous drain current of the SI4486EY-T1-E3?

The maximum continuous drain current (Id) for the SI4486EY-T1-E3 is 5.4A at 25°C.

What is the Rds(on) of the SI4486EY-T1-E3?

The Rds(on) is 25mΩ at 7.9A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SI4486EY-T1-E3 in?

The SI4486EY-T1-E3 is in an 8-SOIC package.

Is the SI4486EY-T1-E3 RoHS compliant?

Yes, the SI4486EY-T1-E3 is RoHS3 Compliant.

Is the SI4486EY-T1-E3 halogen-free?

Yes, the SI4486EY-T1-E3 is Halogen-free.

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