SI4485DY-T1-GE3 The Vishay Dale SI4485DY-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 6A continuous current rating. It features a low on-resistance of 0.042 Ohm at 10V gate-source voltage.
Mfr Part #:

SI4485DY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4485DY-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 6A continuous current rating. It features a low on-resistance of 0.042 Ohm at 10V gate-source voltage.
✓ Total Stock: 229,520 pcs
$ Price Range: $0.99

SI4485DY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
226,000 pcs
226000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,520 pcs
3520 pcs On Request 1 On Request On Request On Request On Request On Request

SI4485DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4485DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4485DY-T1-GE3 is a P-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 6A at 25°C case temperature.

 

Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.042 Ohm at a gate-source voltage (VGS) of -10V and a drain current (ID) of -5.9A. The device also features a typical gate charge (Qg) of 21 nC at 10V VGS and an input capacitance (Ciss) of 590 pF at 15V VDS.

 

This MOSFET is housed in an 8-SOIC package suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is compliant with RoHS Directive 2002/95/EC and is halogen-free.

 

Applications include load switching and notebook adaptor switching.

SI4485DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SI4485DY-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SI4485DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4485DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4485DY-T1-GE3 Features

  • P-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 6A continuous drain current.
  • Low 0.042 Ohm Rds On.
  • Surface mount 8-SOIC package.

SI4485DY-T1-GE3 Applications

  • Suitable for load switching.
  • Used in notebook adaptors.
  • Power management circuits.

SI4485DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4485DY-T1-GE3?

The drain-source voltage is 30V.

What is the continuous drain current of the SI4485DY-T1-GE3?

The continuous drain current is 6A at 25°C case temperature.

What is the maximum on-state resistance (Rds On) for this MOSFET?

The maximum Rds On is 0.042 Ohm at 5.9A drain current and 10V gate-source voltage.

What is the operating temperature range for the SI4485DY-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4485DY-T1-GE3 in?

It is in an 8-SOIC package.

Is the SI4485DY-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

Is the SI4485DY-T1-GE3 halogen-free?

Yes, it is halogen-free.

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