SI4484EY-T1-E3 The Vishay Siliconix SI4484EY-T1-E3 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 4.8A. It features a low on-state resistance of 34mOhm at 10V gate-source voltage.
Mfr Part #:

SI4484EY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI4484EY-T1-E3 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 4.8A. It features a low on-state resistance of 34mOhm at 10V gate-source voltage.
✓ Total Stock: 1,475 pcs
$ Price Range: $0.99

SI4484EY-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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1,475 pcs
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SI4484EY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4484EY-T1-E3 Description

Short technical summary and product information.

The Vishay Siliconix Si4484EY-T1-E3 is an N-Channel Power MOSFET designed for various applications. It offers a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 4.8A at 25°C ambient temperature. The MOSFET exhibits a low on-state resistance (Rds(on)) of 34mOhm when driven at 10V gate-source voltage and 6.9A drain current.

 

This device operates within a wide temperature range of -55°C to 175°C (TJ), making it suitable for demanding environments. It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, facilitating integration into compact PCB designs. The TrenchFET technology employed in this MOSFET contributes to its performance characteristics.

 

Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2V (min) at 250µA and a maximum gate-source voltage of ±20V. The maximum power dissipation is rated at 1.8W at 25°C ambient temperature. The device is also noted as Halogen-free.

SI4484EY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si4484EY N-Channel 100V MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SI4484EY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4484EY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4484EY-T1-E3 Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current of 4.8A at 25°C.
  • Low on-state resistance of 34mOhm at 10V.
  • Wide operating temperature range: -55°C to 175°C.
  • Halogen-free and RoHS3 compliant.

SI4484EY-T1-E3 Applications

  • Used in DC-DC converter circuits.
  • Ideal for load switching applications.
  • Suitable for power management modules.
  • Works in industrial control systems.

SI4484EY-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SI4484EY-T1-E3 MOSFET?

The drain-source voltage (Vds) rating for the SI4484EY-T1-E3 is 100V.

What is the continuous drain current of the SI4484EY-T1-E3 MOSFET?

The continuous drain current (Id) is 4.8A at 25°C ambient temperature.

What is the on-state resistance (Rds(on)) of the SI4484EY-T1-E3 MOSFET?

The Rds(on) is a maximum of 34mOhm at a drain current of 6.9A and a gate-source voltage of 10V.

What is the operating temperature range for the SI4484EY-T1-E3 MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SI4484EY-T1-E3 MOSFET supplied in?

The SI4484EY-T1-E3 is supplied in an 8-SOIC package.

Is the SI4484EY-T1-E3 MOSFET Halogen-free?

Yes, the SI4484EY-T1-E3 MOSFET is Halogen-free.

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