SI4483ADY-T1-GE3 The Vishay Dale SI4483ADY-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 19.2A. It is supplied in an 8-SOIC package.
Mfr Part #:

SI4483ADY-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4483ADY-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 19.2A. It is supplied in an 8-SOIC package.
✓ Total Stock: 8,194 pcs
$ Price Range: $0.99

SI4483ADY-T1-GE3 Available from 3 distributors

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✓ Non-Authorised
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3,988 pcs
3988 pcs On Request 1 On Request On Request On Request On Request On Request
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3,593 pcs
3593 pcs On Request 1 On Request On Request On Request On Request On Request
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613 pcs
613 pcs On Request 1 On Request On Request 12+ On Request On Request

SI4483ADY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4483ADY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4483ADY-T1-GE3 is a P-Channel TrenchFET Power MOSFET designed for various applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 19.2A at 25°C case temperature.

 

Key electrical characteristics include a low on-state resistance (Rds On) of 8.8mOhm at 10A and 10V Vgs, and a gate charge (Qg) of 135nC at 10V Vgs. The device operates over a wide temperature range of -55°C to 150°C.

 

This MOSFET is available in an 8-SOIC package, suitable for surface mounting. It is compliant with RoHS 3 standards and is halogen-free, making it suitable for environmentally conscious designs. The device is 100% Rg Tested and 100% UIS Tested.

 

Applications include adaptor switches and general power management circuits where efficient switching and low on-resistance are critical.

SI4483ADY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si4483ADY P-Channel 30 V Power MOSFET
Subcategory: P-Channel

SI4483ADY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4483ADY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4483ADY-T1-GE3 Features

  • P-Channel 30V Power MOSFET.
  • Low Rds On: 8.8mOhm at 10A, 10V.
  • High continuous drain current: 19.2A.
  • Surface mount 8-SOIC package.
  • RoHS 3 Compliant and Halogen-free.

SI4483ADY-T1-GE3 Applications

  • Suitable for adaptor switch applications.
  • Used in power management circuits.
  • Ideal for efficient power switching.
  • Designed for general purpose switching.

SI4483ADY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI4483ADY-T1-GE3?

The drain-source breakdown voltage is 30 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 19.2A at 25°C case temperature.

What is the Rds On (Max) at 10A and 10V Vgs?

The Rds On (Max) is 8.8mOhm at 10A and 10V Vgs.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4483ADY-T1-GE3 supplied in?

It is supplied in an 8-SOIC package.

Is this component RoHS compliant?

Yes, it is RoHS 3 Compliant.

Is this component Halogen-free?

Yes, it is Halogen-free.

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