| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The SI4482DY-T1 from Vishay Dale is an N-Channel MOSFET belonging to the TrenchFET technology family. It is designed for efficient power switching applications, featuring a maximum drain-source voltage of 100V and a continuous drain current capability of 4.6A.
This MOSFET exhibits a low on-resistance (RDS On) of 60 mOhms, contributing to reduced power loss during operation. It operates within a temperature range of -55C to +150C and has a maximum power dissipation of 2.5W.
The component is housed in a compact SOIC-8 Narrow surface-mount package, making it suitable for space-constrained designs. It is supplied on a reel for automated assembly processes, with a standard package quantity of 2500 units.
Key electrical characteristics include a gate-source voltage rating of ±20V. The device is configured as a single MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The continuous drain current is 4.6 A.
The RDS On is 60 mOhms.
The operating temperature range is -55 C to +150 C.
It is in a SOIC-8 Narrow package.
It is a surface mount device.
The standard package quantity is 2500 units.