SI4477DY-T1-GE3 The Vishay Dale SI4477DY-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 26.6A. It is housed in an 8-SOIC package.
Mfr Part #:

SI4477DY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4477DY-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 26.6A. It is housed in an 8-SOIC package.
✓ Total Stock: 16,020 pcs
$ Price Range: $0.99

SI4477DY-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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16,020 pcs
16020 pcs On Request 1 On Request On Request On Request On Request On Request

SI4477DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4477DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4477DY-T1-GE3 is a P-Channel MOSFET designed for applications such as load switching and adapter switching. It features a drain-source voltage (Vds) of 20V and a continuous drain current (Tc) of up to 26.6A. The MOSFET exhibits a low on-state resistance (Rds On) of 6.2mOhm at 18A and 4.5V Vgs.

 

This device operates within a temperature range of -55°C to 150°C (TJ) and is packaged in an 8-SOIC surface mount configuration. Its key electrical characteristics include a gate-source voltage (Vgs) of ±12V and a gate charge (Qg) of 190nC. The MOSFET is also noted for its Halogen-free compliance.

 

Applications for the SI4477DY-T1-GE3 include notebook and game station power management. Its robust design and specifications make it suitable for various power control circuits requiring efficient switching.

SI4477DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si4477DY P-Channel 20V MOSFET
Subcategory: P-Channel

SI4477DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4477DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4477DY-T1-GE3 Features

  • P-Channel 20V MOSFET
  • Continuous drain current 26.6A
  • Low Rds On: 6.2mOhm at 18A, 4.5V
  • 8-SOIC surface mount package
  • Halogen-free compliant

SI4477DY-T1-GE3 Applications

  • Suitable for load switching
  • Ideal for adapter switching
  • Used in notebook applications
  • Applicable to game stations

SI4477DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI4477DY-T1-GE3?

The drain-source breakdown voltage is 20V.

What is the maximum continuous drain current for the SI4477DY-T1-GE3?

The maximum continuous drain current is 26.6A at 25°C (Tc).

What is the Rds On for the SI4477DY-T1-GE3?

The Rds On is a maximum of 6.2mOhm at 18A and 4.5V Vgs.

What is the operating temperature range for the SI4477DY-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What is the package type for the SI4477DY-T1-GE3?

The device is supplied in an 8-SOIC package.

Is the SI4477DY-T1-GE3 RoHS compliant?

The SI4477DY-T1-GE3 is RoHS3 Compliant.

Does the SI4477DY-T1-GE3 meet Halogen-free standards?

Yes, the SI4477DY-T1-GE3 is Halogen-free.

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