| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60,267 pcs
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60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4470EY-T1-GE3 from Vishay Dale is an N-Channel MOSFET with a drain-source voltage rating of 60V. It is designed for surface mount applications and comes in an 8-SOIC package.
Key electrical characteristics include a maximum continuous drain current of 9A (at Ta) and a low on-resistance (Rds On) of 11mOhm at 12A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V. The power dissipation is rated at 1.85W (at Ta).
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is manufactured using Metal Oxide technology and is compliant with RoHS standards. The component is supplied in a Tape & Reel package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 60 V.
The maximum continuous drain current is 9 A (at Ta).
The Rds On is a maximum of 11 mOhm at 12A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C (TJ).
The component is supplied in an 8-SOIC package.
Yes, the RoHS status is RoHS Compliant.