| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,608 pcs
|
2608 pcs | On Request | 1 | On Request | On Request | 0947+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4467DY from On Semiconductor is a P-Channel MOSFET with a drain-source voltage (Vdss) of 20V. It is designed for surface mount applications and comes in an 8-SOIC package.
Key electrical characteristics include a maximum on-resistance (Rds On) of 8.5mOhm at 13.5A and 4.5V Vgs. The gate charge (Qg) is 120 nC maximum at 4.5V Vgs, and the gate threshold voltage (Vgs(th)) is 1.5V maximum at 250µA. The operating temperature range is -55°C to 175°C (TJ).
This MOSFET utilizes Metal Oxide technology and is suitable for various power switching applications. Its compact 8-SOIC package facilitates integration into space-constrained designs. The device is rated for a maximum power dissipation of 1.2W (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SI4467DY is 20V.
The SI4467DY can handle a maximum continuous current of 13.5A (Ta).
The Rds On is a maximum of 8.5mOhm at 13.5A and 4.5V Vgs.
The operating temperature range is -55°C to 175°C (TJ).
The SI4467DY is available in an 8-SOIC package.
The SI4467DY is a surface mount device.