| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,312 pcs
|
2312 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4466DY from On Semiconductor is an N-Channel MOSFET utilizing Metal Oxide technology. It is designed for small signal applications and offers a drain-source voltage of 20V and a maximum continuous drain current of 15A at ambient temperature.
Key electrical characteristics include a low Rds(on) of 7.5mOhm at 15A and 4.5V Vgs, and a gate threshold voltage of 1.5V maximum. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is available in a surface-mount 8-SOIC package, making it suitable for various electronic designs where space is a consideration. It is compliant with RoHS3 standards and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the SI4466DY is 20V.
The SI4466DY has a continuous drain current rating of 15A at ambient temperature.
The maximum Rds(on) for the SI4466DY is 7.5mOhm at 15A and 4.5V Vgs.
The SI4466DY operates between -55°C and 150°C.
The SI4466DY is available in an 8-SOIC Narrow surface mount package.
The SI4466DY is RoHS3 Compliant.
The Moisture Sensitivity Level for the SI4466DY is 1 Unlimited.