SI4465ADY-T1-GE3 The Vishay Dale SI4465ADY-T1-GE3 is a P-Channel MOSFET with a drain-source voltage of 8V. It features a low on-state resistance and is available in a surface mount 8-SOIC package.
Mfr Part #:

SI4465ADY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4465ADY-T1-GE3 is a P-Channel MOSFET with a drain-source voltage of 8V. It features a low on-state resistance and is available in a surface mount 8-SOIC package.
✓ Total Stock: 3,200 pcs
$ Price Range: $0.99

SI4465ADY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request 2012 On Request On Request
Non-Authorised Inventory information
1,200 pcs
1200 pcs On Request 1 On Request On Request On Request On Request On Request

SI4465ADY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4465ADY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4465ADY-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vds) of 8V and a gate-source voltage (Vgs) of ±8V. The device exhibits a low drain-source on-state resistance (Rds(on)), with a maximum of 9mΩ at a drain current (Id) of 14A and gate-source voltage (Vgs) of 4.5V.

 

This MOSFET has a continuous drain current rating of 13.7A at 25°C ambient temperature and 20A at 25°C case temperature. The maximum power dissipation is 3W at 25°C ambient and 6.5W at 25°C case temperature. It operates within a temperature range of -55°C to 150°C.

 

The SI4465ADY-T1-GE3 is housed in an 8-SOIC package, suitable for surface mounting. It is rated as RoHS3 Compliant and has an MSL rating of 1.

SI4465ADY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 1.8V Rated MOSFET
Subcategory: P-Channel

SI4465ADY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4465ADY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4465ADY-T1-GE3 Features

  • P-Channel MOSFET with 8V drain-source voltage.
  • Low on-state resistance of 9mΩ at 14A.
  • Continuous drain current up to 13.7A.
  • Surface mount 8-SOIC package.
  • RoHS3 compliant and MSL 1 rated.

SI4465ADY-T1-GE3 Applications

  • Suitable for power switching circuits.
  • Ideal for low-voltage applications.
  • Used in battery management systems.
  • Applicable in load switch designs.

SI4465ADY-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4465ADY-T1-GE3?

The drain-source voltage (Vds) is 8V.

What is the maximum continuous drain current?

The maximum continuous drain current is 13.7A at 25°C ambient temperature and 20A at 25°C case temperature.

What is the on-state resistance (Rds On) at 4.5V gate drive?

The Rds On is a maximum of 0.009 Ohms at 14A drain current and 4.5V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4465ADY-T1-GE3 available in?

It is available in an 8-SOIC package for surface mounting.

Is this component RoHS compliant?

Yes, this component is RoHS3 Compliant.

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