| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,488 pcs
|
1488 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI4465ADY-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vds) of 8V and a continuous drain current (Id) of up to 13.7A at 25°C ambient temperature, and 20A at 25°C case temperature.
The MOSFET exhibits a low on-state resistance (Rds(on)) of 9mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current of 14A. It operates with a gate-source voltage range of ±8V and a gate threshold voltage (Vgs(th)) of 1V at 250µA.
Packaged in an 8-SOIC (0.154", 3.90mm Width) case, this component is designed for surface mounting. The operating temperature range is from -55°C to 150°C (TJ), making it suitable for demanding environments. The device also features a typical gate charge of 55nC and a maximum power dissipation of 3W at 25°C ambient temperature.
This MOSFET is rated for 1.8V and 4.5V drive voltages, providing flexibility in design. It is also noted as Halogen-free according to IEC 61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 8 V.
The maximum continuous drain current is 13.7A at 25°C ambient and 20A at 25°C case temperature.
The Rds On is 9mOhm at 14A drain current and 4.5V gate-source voltage.
The typical gate charge is 55 nC.
The operating temperature range is -55°C to 150°C.
It is a P-Channel MOSFET.
The package type is 8-SOIC and it is surface mount.