SI4464DY-T1-E3 The Vishay Dale SI4464DY-T1-E3 is an N-Channel MOSFET designed for 200V applications. It features a continuous drain current of 1.7A and a low on-resistance of 240mOhm.
Mfr Part #:

SI4464DY-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4464DY-T1-E3 is an N-Channel MOSFET designed for 200V applications. It features a continuous drain current of 1.7A and a low on-resistance of 240mOhm.
✓ Total Stock: 111,420 pcs
$ Price Range: $0.99

SI4464DY-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
90,400 pcs
90400 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
21,020 pcs
21020 pcs On Request 1 On Request On Request On Request On Request On Request

SI4464DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4464DY-T1-E3 Description

Short technical summary and product information.

The SI4464DY-T1-E3 from Vishay Dale is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (Vdss) of 200V. It is designed for surface mount applications and comes in an 8-SOIC package.

 

This MOSFET offers a continuous drain current of 1.7A at 25°C and a maximum on-resistance of 240mOhm at 2.2A and 10V gate-source voltage. The gate threshold voltage is 4V at 250µA, and the maximum gate charge is 18nC at 10V. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 1.5W (Ta).

 

The device utilizes MOSFET (Metal Oxide) technology and is suitable for various electronic circuits requiring efficient switching and power handling. The drive voltage requirements are between 6V and 10V for optimal performance.

 

Packaged in Tape & Reel (TR), the SI4464DY-T1-E3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited.

SI4464DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: SI4464DY-T1-E3 N-Channel MOSFET
Subcategory: N-Channel

SI4464DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead free

SI4464DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4464DY-T1-E3 Features

  • N-Channel MOSFET technology.
  • 200V maximum drain-source voltage.
  • 1.7A continuous drain current.
  • Low 240mOhm on-resistance.
  • Surface mount 8-SOIC package.

SI4464DY-T1-E3 Applications

  • Suitable for power switching circuits.
  • Ideal for general purpose applications.
  • Used in compact electronic designs.
  • Efficient power management solutions.

SI4464DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SI4464DY-T1-E3?

The maximum drain-to-source voltage (Vdss) is 200V.

What is the continuous drain current of the SI4464DY-T1-E3?

The continuous drain current is 1.7A at 25°C.

What is the on-resistance of the SI4464DY-T1-E3?

The maximum on-resistance is 240mOhm at 2.2A and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What type of package is the SI4464DY-T1-E3 in?

It is in an 8-SOIC package.

Is the SI4464DY-T1-E3 RoHS compliant?

The product is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI4464DY-T1-E3?

The Moisture Sensitivity Level is 1 Unlimited.

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