| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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105 pcs
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105 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Si4463DY is a P-Channel MOSFET from Siliconix, utilizing a rugged gate PowerTrench process. It is optimized for power management applications and supports a wide range of gate drive voltages from 2.5V to 12V.
Key electrical characteristics include a drain-source voltage of -20V and a continuous drain current of -11.5A. The on-resistance is specified as 12 mΩ at VGS = -4.5V and 17.5 mΩ at VGS = -2.5V. It offers fast switching speeds and high power and current handling capability.
This MOSFET is suitable for applications such as load switching and battery protection. It comes in a SO-8 package, designed for surface mounting.
Absolute maximum ratings include a junction-to-ambient thermal resistance of 50 °C/W and a junction-to-case thermal resistance of 25 °C/W. The operating and storage junction temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
-11.5 A
12 mΩ
-55 to +150 °C
SO-8
2500 units