Mfr Part #:

SI4463CDY-T1-GE3

Name: SI4463CDY-T1-GE3
Brand: Vishay
SKU: SI4463CDY-T1-GE3
Availability: InStock

Mfr Name: Vishay

Description:

MOSFET P-CH 20V 13.6A/49A 8SO

✓ Total Stock: 100,214 pcs

SI4463CDY-T1-GE3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	96 pcs On Request	96 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	118 pcs On Request	118 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Romaks Technologies ✓ Non-Authorised Inventory information	100,000 pcs On Request	100000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

MOSFET P-CH 20V 13.6A/49A 8SO

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	13.6A (Ta), 49A (Tc)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4250 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.7W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs	8mOhm @ 13A, 10V
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.4V @ 250µA