| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
118 pcs
|
118 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
96 pcs
|
96 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4463CDY-T1-GE3 is a P-Channel MOSFET designed for various switching applications. It features a drain-source breakdown voltage of 20V and a maximum continuous drain current of 18.6A at 25°C case temperature. The MOSFET exhibits a low on-resistance of 8mOhm at 13A and 10V gate-source voltage.
This device operates within a temperature range of -55°C to 150°C (TJ). It is constructed using TrenchFET power MOSFET technology and is 100% Rg and UIS tested. The MOSFET is housed in an 8-SOIC package, suitable for surface mounting.
Key electrical characteristics include a gate charge of 54nC typical and an input capacitance of 4250pF maximum. The device is rated for a maximum power dissipation of 2.7W at 25°C ambient temperature and 5W at 25°C case temperature. It is RoHS3 compliant and has an MSL rating of 1.
Applications for this MOSFET include adaptors, high current load switches, and notebook power management. Its robust design and specifications make it a reliable choice for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20 V (minimum) at VGS = 0 V and ID = -250 μA.
The maximum continuous drain current is -13.6 A at 25°C ambient temperature and -18.6 A at 25°C case temperature.
The maximum on-resistance is 8 mOhm at VGS = -10 V and ID = 13 A, 10 mOhm at VGS = -4.5 V, and 14 mOhm at VGS = -2.5 V.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The gate-source threshold voltage is -0.6 V to -1.4 V at ID = -250 μA.
Maximum power dissipation is 5 W at case temperature 25°C and 2.7 W at ambient temperature 25°C.