SI4463BDY-T1-E3 The Vishay Dale SI4463BDY-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 9.8A continuous drain current. It is available in an 8-SOIC surface mount package.
Mfr Part #:

SI4463BDY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4463BDY-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 9.8A continuous drain current. It is available in an 8-SOIC surface mount package.
Total Stock: 5,007 pcs
$ Price Range: $0.99

SI4463BDY-T1-E3 Available from 3 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 20+ On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
7 pcs
7 pcs On Request 1 On Request On Request On Request On Request On Request

SI4463BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4463BDY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4463BDY-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 9.8A at 25°C ambient temperature.

 

This MOSFET offers a low on-state resistance (Rds(on)) of 11mΩ at a gate-source voltage (Vgs) of -10V and a drain current of -13.7A. The gate threshold voltage (Vgs(th)) is a maximum of 1.4V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).

 

The device is housed in an 8-SOIC package, suitable for surface mounting. Its maximum power dissipation is rated at 1.5W at 25°C ambient temperature. The SI4463BDY-T1-E3 is also noted as being Halogen-free according to IEC 61249-2-21 standards.

SI4463BDY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 20V 9.8A 8-SOIC MOSFET
Subcategory: P-Channel

SI4463BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4463BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4463BDY-T1-E3 Features

  • P-Channel 20V MOSFET
  • 9.8A continuous drain current
  • 11mOhm Rds(on) at 10V
  • Surface mount 8-SOIC package
  • Halogen-free construction

SI4463BDY-T1-E3 Applications

  • High-side load switching in portable devices.
  • Battery protection circuits in consumer electronics.
  • Power management for DC-DC converters.
  • Efficient power distribution in low-voltage systems.

SI4463BDY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage (Vds) for the SI4463BDY-T1-E3?

The drain-source voltage (Vds) for the SI4463BDY-T1-E3 is 20V.

What is the continuous drain current (Id) of the SI4463BDY-T1-E3?

The continuous drain current (Id) is 9.8A at 25°C ambient temperature.

What is the Rds(on) for the SI4463BDY-T1-E3?

The Rds(on) is a maximum of 11mΩ at a drain current of 13.7A and a gate-source voltage of 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4463BDY-T1-E3 available in?

The SI4463BDY-T1-E3 is available in an 8-SOIC package suitable for surface mounting.

Is the SI4463BDY-T1-E3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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