| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
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| Vgs(th) (Max) @ Id |
The SI4462DY-T1-GE3 is a high-performance N-Channel MOSFET manufactured by Vishay Dale. It features a maximum Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 1.15A at 25°C.
This MOSFET utilizes Metal Oxide technology and offers a low On-Resistance (Rds On) of 480mOhm at 1.5A and 10V Vgs. The Gate Threshold Voltage (Vgs(th)) is 4V at 250µA, and the maximum Gate-Source Voltage (Vgs) is ±20V. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, the SI4462DY-T1-GE3 is supplied on Tape & Reel. It is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction).
Yes, it is lead-free.
480mOhm maximum at Vgs=10V, Id=1.5A.
9nC at Vgs=10V.
1.15A at 25°C ambient.