| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
33,000 pcs
|
33000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
233 pcs
|
233 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI4462DY-T1-E3 from Vishay Dale is a single N-Channel MOSFET designed for various electronic applications. It features a maximum Drain-Source Voltage (Vdss) of 200V and can handle a continuous drain current of 1.15A at 25°C.
The MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology. Its on-resistance (Rds On) is specified at a maximum of 480mOhm at 1.5A and 10V Vgs. The gate charge (Qg) is 9 nC at 10V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA.
This component is supplied in an 8-SOIC package, suitable for surface mounting. The package dimensions are 0.154 inches (3.90mm) in width. It is available in Cut Tape (CT) packaging.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These specifications make the SI4462DY-T1-E3 suitable for applications requiring a robust N-channel MOSFET in a standard surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
1.15A at 25°C ambient.
480mOhm maximum at Id=1.5A and Vgs=10V.
9nC at Vgs=10V.
4V maximum at Id=250µA.
8-SOIC (0.154", 3.90mm Width) surface-mount package.
N-Channel.